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| NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 21m[ 35m[ ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 20 7 6 28 2 1.3 -55 to 150 275 -30 20 -6 -5 -24 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg TL W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A N-Ch P-Ch N-Ch P-Ch 30 -30 0.8 -0.8 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free VDS = 0V, VGS = 20V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch 100 100 1 -1 nA VDS = 20V, VGS = 0V, TJ = 55 C N-Ch VDS = -20V, VGS = 0V, TJ = 55 C P-Ch A 10 -10 On-State Drain Current 1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 28 -24 21 44 14 28 8 7 32 60 A Drain-Source On-State Resistance 1 VGS = -4.5V, ID = -5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -6A m[ 21 35 Forward Transconductance 1 gfs VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 1700 970 380 370 260 180 40 28 28 6 12 12 nC pF Output Capacitance Coss Reverse Transfer Capacitance 2 Crss VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Qg 2 Gate-Source Charge 2 Qgs Gate-Drain Charge Qgd 2 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free Turn-On Delay Time 2 2 td(on) N-Channel VDS = 15V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 20 10 17 120 160 35 75 nS Rise Time tr 2 ID 1A, VGS = 10V, RGEN = 6[ P-Channel VDS = -15V, RL = 1[ Turn-Off Delay Time td(off) Fall Time 2 tf N-Ch P-Ch ID -1A, VGS = -10V, RGEN = 6[ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V VSD IF = -1A, VGS = 0V IF = 5A, dlF/dt = 100A / S Reverse Recovery Time trr IF = -5A, dlF/dt = 100A / S Reverse Recovery Charge 1 2 3 -3 6 -6 1 -1 15.5 15.5 7.9 7.9 V A Pulsed Current 3 ISM Forward Voltage 1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nS Qrr nC Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2103NVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free N-CHANNEL 4 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free 5 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free P-CHANNEL 6 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free 7 MAY-21-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free SOIC-8 (D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 H I J K L M N 0 Dimension Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4 8 Max. 0.83 0.25 mm 8 MAY-21-2004 |
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